GYIG OpenIR  > 地球内部物质高温高压实验室
Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa
Xinyu Zhang; Lidong Dai; Haiying Hu; Meiling Hong; Chuang Li
2022
Source PublicationRsc Advances
Volume12Issue:4Pages:2454-2461
Abstract

A series of in situ high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS 2 under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural–electronic transition in SnS 2 occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E g mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural–electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS 2 decreased slowly with increasing pressure and it closed in the pressure range of 30–40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural–electronic transition was reversible, which was further confirmed by our HRTEM observations.

DOI10.1039/D1RA08632D
Indexed BySCI
Language英语
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Cited Times:14[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.gyig.ac.cn/handle/42920512-1/13488
Collection地球内部物质高温高压实验室
地球深部物质与流体作用地球化学研究室
Affiliation1.Key Laboratory of High-temperature and High-pressure Study of the Earth's Interior, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang, Guizhou 550081, China
2.University of Chinese Academy of Sciences, Beijing 100049, China
Recommended Citation
GB/T 7714
Xinyu Zhang,Lidong Dai,Haiying Hu,et al. Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa[J]. Rsc Advances,2022,12(4):2454-2461.
APA Xinyu Zhang,Lidong Dai,Haiying Hu,Meiling Hong,&Chuang Li.(2022).Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa.Rsc Advances,12(4),2454-2461.
MLA Xinyu Zhang,et al."Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa".Rsc Advances 12.4(2022):2454-2461.
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