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Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser
Huang Wei-Qi;  Chen Hang-Qiong;  Shu Qin;  Liu Shi-Rong;  Qin Chao-Jian
2012
Source PublicationChinese Physics B
Volume21Issue:6Pages:1-5
Abstract

A new nanolaser concept using silicon quantum dots (QDs) is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission. An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser. Coupling between the active centres formed by localized states and the defect states of the two-dimensional (2D) photonic crystal can be used to select the model in the nanolaser.

Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.gyig.ac.cn/handle/42920512-1/10982
Collection矿床地球化学国家重点实验室
Affiliation1.Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China
2.State Key Laboratory of Ore Deposit Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
Recommended Citation
GB/T 7714
Huang Wei-Qi;Chen Hang-Qiong;Shu Qin;Liu Shi-Rong;Qin Chao-Jian. Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser[J]. Chinese Physics B,2012,21(6):1-5.
APA Huang Wei-Qi;Chen Hang-Qiong;Shu Qin;Liu Shi-Rong;Qin Chao-Jian.(2012).Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser.Chinese Physics B,21(6),1-5.
MLA Huang Wei-Qi;Chen Hang-Qiong;Shu Qin;Liu Shi-Rong;Qin Chao-Jian."Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser".Chinese Physics B 21.6(2012):1-5.
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