Selecting of modes in nano-laser of silicon quantum dots | |
Wei-Qi Huang; Shi-Rong Liu; Chao-Jian Qin; Quan Lü | |
2012 | |
Source Publication | Optics Communications
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Volume | 285Issue:13–14Pages:3217-3221 |
Abstract | In a nano-laser of Si quantum dots (QD), the smaller QD fabricated by nanosecond pulse laser can form the pumping level tuned by the quantum confinement (QC) effect. Coupling between the active centers formed by localized states of surface bonds and the two-dimensional (2D) photonic crystal used to select model can produce a sharp peak at 2.076 eV in the nano-laser. It is interesting to make a comparison between the localized electronic states in gap due to defect formed by surface bonds and the localized photonic states in gap of photonic band due to defect of 2D photonic crystal. |
Keyword | Nano-laser si Quantum Dots localized States photonic Crystal |
Indexed By | SCI |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.gyig.ac.cn/handle/42920512-1/9469 |
Collection | 矿床地球化学国家重点实验室 |
Affiliation | 1.Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China 2.State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China |
Recommended Citation GB/T 7714 | Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü. Selecting of modes in nano-laser of silicon quantum dots[J]. Optics Communications,2012,285(13–14):3217-3221. |
APA | Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü.(2012).Selecting of modes in nano-laser of silicon quantum dots.Optics Communications,285(13–14),3217-3221. |
MLA | Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü."Selecting of modes in nano-laser of silicon quantum dots".Optics Communications 285.13–14(2012):3217-3221. |
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