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Selecting of modes in nano-laser of silicon quantum dots
Wei-Qi Huang;  Shi-Rong Liu;  Chao-Jian Qin;  Quan Lü
2012
Source PublicationOptics Communications
Volume285Issue:13–14Pages:3217-3221
Abstract

In a nano-laser of Si quantum dots (QD), the smaller QD fabricated by nanosecond pulse laser can form the pumping level tuned by the quantum confinement (QC) effect. Coupling between the active centers formed by localized states of surface bonds and the two-dimensional (2D) photonic crystal used to select model can produce a sharp peak at 2.076 eV in the nano-laser. It is interesting to make a comparison between the localized electronic states in gap due to defect formed by surface bonds and the localized photonic states in gap of photonic band due to defect of 2D photonic crystal.

KeywordNano-laser si Quantum Dots localized States photonic Crystal
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.gyig.ac.cn/handle/42920512-1/9469
Collection矿床地球化学国家重点实验室
Affiliation1.Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China
2.State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
Recommended Citation
GB/T 7714
Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü. Selecting of modes in nano-laser of silicon quantum dots[J]. Optics Communications,2012,285(13–14):3217-3221.
APA Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü.(2012).Selecting of modes in nano-laser of silicon quantum dots.Optics Communications,285(13–14),3217-3221.
MLA Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü."Selecting of modes in nano-laser of silicon quantum dots".Optics Communications 285.13–14(2012):3217-3221.
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