Curved surface effect and manipulation of electronic states in nanosilicon | |
Zhong-Mei Huang; Wei-Qi Huang; Xue-Ke Wu; Shi-Rong Liu; Cao-Jian Qin | |
2017 | |
Source Publication | Scientific Reports
![]() |
Pages | 1-9 |
Abstract | It is interesting in low-dimensional nanostructures of silicon that the two quantum effects play different roles in nanosilicon emission, in which the quantum confinement (QC) effect opens band gap and makes emission shift into shorter wavelengths (blue-shift) as the size of the nanocrystals is reduced; however the breaking symmetry originating from impurities on nanosilicon produces the localized electronic states in band gap and makes emission shift into longer wavelengths (red-shift). The results of experiment and calculation demonstrated that the energy levels of nanosilicon can be manipulated through these quantum effects, where the curved surface (CS) effect of impurity atoms bonding on nanosilicon is important in breaking symmetry of nanosilicon system. Here, the CS effect plays an important role on impuritied nanosilicon in smaller scale with larger surface curvature, in which a few characteristic parameters have been found to describe the breaking symmetry of nanosilicon system, such as bonding angle and projecting length of bonds on curved surface. More interesting, the coupling ways between the QC effect and the CS effect determinate the levels position of localized states in band gap and manipulate emission wavelength, where a few new phenomena were explored. |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.gyig.ac.cn/handle/42920512-1/8375 |
Collection | 矿床地球化学国家重点实验室 |
Affiliation | 1.College of materials and metallurgy, Institute of Nanophotonic Physics, Guizhou University, Guiyang, 550025, China 2.State key laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai, 200433, China 3.State Key Laboratory of Environmental Geochemistry Institute of Geochemistry, Chinese Academy of Science Institute of Geochemistry, Guiyang, 550003, China |
Recommended Citation GB/T 7714 | Zhong-Mei Huang;Wei-Qi Huang;Xue-Ke Wu;Shi-Rong Liu;Cao-Jian Qin. Curved surface effect and manipulation of electronic states in nanosilicon[J]. Scientific Reports,2017:1-9. |
APA | Zhong-Mei Huang;Wei-Qi Huang;Xue-Ke Wu;Shi-Rong Liu;Cao-Jian Qin.(2017).Curved surface effect and manipulation of electronic states in nanosilicon.Scientific Reports,1-9. |
MLA | Zhong-Mei Huang;Wei-Qi Huang;Xue-Ke Wu;Shi-Rong Liu;Cao-Jian Qin."Curved surface effect and manipulation of electronic states in nanosilicon".Scientific Reports (2017):1-9. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Curved surface effec(1737KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment