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Knowledge Management System Of Institute of Geochemistry,CAS
| Analysis of opto-electrical properties of Cu/Sr-W/n-Si (MIS) Schottky barrier diode for optoelectronic applications | |
| V. Balasubramani; R. Marnadu; R. Priya; S. Thanikaikarasan; A. Sivakumar; Mohd. Shkir; F. Maiz; Woo Kyoung Kim; Vasudeva Reddy Minnam Reddy | |
| 2023 | |
| Source Publication | Journal of Materials Science: Materials in Electronics |
| Volume | 34Issue:6 |
| Abstract |
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| DOI | 10.1007/s10854-022-09733-1 |
| URL | 查看原文 |
| Indexed By | SCI |
| Language | 英语 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.gyig.ac.cn/handle/42920512-1/14817 |
| Collection | 地球内部物质高温高压实验室 |
| Affiliation | 1.Department of Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, Chennai, 602 105, Tamil Nadu, India 2.Department of Physics, Govt Arts And Science College, Sivakasi, 626124, , Tamil Nadu , India 3.Department of Physics, Adhiyamaan College of Engineering, Hosur, Tamilnadu, 635109, India 4.Key Laboratory of High-temperature and High-pressure Study of the Earth’s Interior, Institute of Geochemistry, Chinese Academy of Sciences, , Guiyang, Guiyang, 550081, China 5.Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia 6.Division of Research and Development, Lovely Professional University, Phagwara, Punjab, 144411, India 7.Laboratory of Thermal Processes, Center for Energy Research and Technology, BP: 95, Borj-Cedria, Tunisia 8.School of Chemical Engineering, Yeungnam University, Gyeongsan, 38541, Republic of Korea |
| Recommended Citation GB/T 7714 | V. Balasubramani,R. Marnadu,R. Priya,et al. Analysis of opto-electrical properties of Cu/Sr-W/n-Si (MIS) Schottky barrier diode for optoelectronic applications[J]. Journal of Materials Science: Materials in Electronics,2023,34(6). |
| APA | V. Balasubramani.,R. Marnadu.,R. Priya.,S. Thanikaikarasan.,A. Sivakumar.,...&Vasudeva Reddy Minnam Reddy.(2023).Analysis of opto-electrical properties of Cu/Sr-W/n-Si (MIS) Schottky barrier diode for optoelectronic applications.Journal of Materials Science: Materials in Electronics,34(6). |
| MLA | V. Balasubramani,et al."Analysis of opto-electrical properties of Cu/Sr-W/n-Si (MIS) Schottky barrier diode for optoelectronic applications".Journal of Materials Science: Materials in Electronics 34.6(2023). |
| Files in This Item: | Download All | |||||
| File Name/Size | DocType | Version | Access | License | ||
| Analysis of opto-ele（2091KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Download | |
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