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Surface edge states and enhanced emission on topological insulator of silicon oxide
Wei-Qi Huang;  Zhong-Mei Huang;  Shi-Rong Liu
2019
Source PublicationSurface Science
Volume684Pages:62-66
Abstract

The stable form of silicon takes on the structure of diamond (cF8, d-Si) which is an indirect bandgap semiconductor. Its emission efficiency is very lower (about 10−5) that prevents it from being considered as an ext-generation platform for semiconductor technologies [1][2][3][4][5]. Here, we report the formation of a new topological insulator of silicon oxide produced by nanosecond pulsed laser, using a novel two-step preparation methodology, which has a good emission. First, the amorphous silicon layer was fabricated by nanosecond pulsed laser etching and deposition at oxygen environment, then the topological insulator of silicon oxide was prepared by annealing at 1000°C for suitable time. The stronger emission in visual region was observed in photoluminescence (PL) measurement on the topological insulator doped with lower oxygen density, where its external quantum efficiency in emission rises over 20% by four orders than that on pure silicon. It is interesting that the quantum platform of emission has been founded in the evolution curve of PL intensity with change of excitation power. The physical model shows that the higher emission efficiency is originated from the special electronic properties in the new topological insulator of silicon oxide, which is fundamentally responsible for creating extended edge states. The topological insulator of silicon oxide will become a new potential material for emission on silicon chip.

KeywordTopological Insulator silicon Oxide emission Efficiency electronic Properties
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.gyig.ac.cn/handle/42920512-1/10873
Collection矿床地球化学国家重点实验室
Affiliation1.Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China
2.State Key Laboratory of Environment Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
3.Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China
Recommended Citation
GB/T 7714
Wei-Qi Huang;Zhong-Mei Huang;Shi-Rong Liu. Surface edge states and enhanced emission on topological insulator of silicon oxide[J]. Surface Science,2019,684:62-66.
APA Wei-Qi Huang;Zhong-Mei Huang;Shi-Rong Liu.(2019).Surface edge states and enhanced emission on topological insulator of silicon oxide.Surface Science,684,62-66.
MLA Wei-Qi Huang;Zhong-Mei Huang;Shi-Rong Liu."Surface edge states and enhanced emission on topological insulator of silicon oxide".Surface Science 684(2019):62-66.
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